Design, simulation, production and initial characterisation of3D silicon detectors

摘要

3D detectors are photodiode radiation detectors with n- and p-type electrode columns passing througha silicon substrate. This structure makes it possible to achieve a very small electrode spacing withoutreducing the sensitive thickness. This greatly reduces the detector's depletion voltage and collectiontime, and hence improves its radiation hardness. This could make 3D detectors useful as pixel detectorsfor future high-luminosity colliders, such as the Super-LHC.The research institute IMB-CNM (Centro Nacional de Microelectronica, Barcelona) have produced 3Dpad, pixel and strip detectors with a "double-sided 3D" structure. This fabrication has been donealongside design and simulation work at the University of Glasgow. The first devices produced by CNMhave been successfully IV and CV tested, and source tests are ongoing. Additionally, this conferencerecord discusses work done by other 3D detector collaborations: Stanford, Manchester University andSintef; FBK (Trento); and Glasgow, Diamond Light Source and IceMOS Ltd.