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机译:
Univ Gottingen, Inst Phys 2, D-37077 Gottingen, Germany;
BEAM-INDUCED AMORPHIZATION; SILICON DIOXIDE FILMS; SIO2 LAYERS; GLASSY SIO2; PHOTOLUMINESCENCE; OXYGEN; LUMINESCENCE; IRRADIATION;
机译:Mechanical strain and defects in the end-of-range region in silicon implanted with Ge+ and co-implanted with C+ ions
机译:Cathodoluminescence of ion-irradiated alpha-quartz: the 3.25-eV band
机译:Cathodoluminescence of ion-irradiated alpha-quartz: the 3.25-eV band
机译:mechanical properties of prestressing steel at elevated temperature and after cooling