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An ab initio study of the ground and excited states of mercaptoacetic acid-capped silicon quantum dots

机译:从头开始研究巯基乙酸封端的硅量子点的基态和激发态

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Ground and excited states of the mercaptoacetic acid-capped silicon quantum dots (SiQDs) were studied using density functional theory and the configuration interaction singles methods, respectively, in conjunction with a 6-31G* basis set. The adsorption of mercaptoacetic acid reduces the optical gap of the Si5 and Si_(10)QDs and results in a red shift of the emission spectra. The optical properties of the SiQDs show size dependence due to the quantum confinement effect. The increase in the number of adsorbed mercaptoacetic acid molecules only makes a small change in the emission spectra of SiQDs. Because of the small changes in the electronic and optical structure of the SiQDs that are capped with mercaptoacetic acid, this molecule offers a good protection of SiQDs.
机译:分别使用密度泛函理论和构型相互作用单峰方法,结合6-31G *基集,研究了巯基乙酸封端的硅量子点(SiQD)的基态和激发态。巯基乙酸的吸附减少了Si5和Si_(10)QDs的光学间隙,并导致发射光谱的红移。由于量子限制效应,SiQD的光学性质显示出尺寸依赖性。巯基乙酸分子的吸附数量的增加仅使SiQD的发射光谱发生很小的变化。由于被巯基乙酸封端的SiQD的电子和光学结构的微小变化,该分子为SiQD提供了良好的保护。

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