Self-trapped holes in beta-Ga2O3 crystals

摘要

We have experimentally observed self-trapped holes (STHs) in a beta-Ga2O3 crystal using electron paramagnetic resonance (EPR). These STHs are an intrinsic defect in this wide-band-gap semiconductor and may serve as a significant deterrent to producing usable p-type material. In our study, an as-grown undoped n-type beta-Ga2O3 crystal was initially irradiated near room temperature with high-energy neutrons. This produced gallium vacancies (acceptors) and lowered the Fermi level. The STHs (i.e., small polarons) were then formed during a subsequent irradiation at 77K with x rays. Warming the crystal above 90K destroyed the STHs. This low thermal stability is a strong indicator that the STH is the correct assignment for these new defects. The S = 1/2 EPR spectrum from the STHs is easily observed near 30 K. A holelike angular dependence of the g matrix (the principal values are 2.0026, 2.0072, and 2.0461) suggests that the defect's unpaired spin is localized on one oxygen ion in a nonbonding p orbital aligned near the a direction in the crystal. The EPR spectrum also has resolved hyperfine structure due to equal and nearly isotropic interactions with Ga-69,Ga-71 nuclei at two neighboring Ga sites. With the magnetic field along the a direction, the hyperfine parameters are 0.92mT for the Ga-69 nuclei and 1.16mT for the Ga-71 nuclei. Published by AIP Publishing.