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Optically rewritable patterns of nuclearmagnetization in gallium arsenide

机译:砷化镓中光学可重写的核磁化模式

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The control of nuclear spin polarization is important to the design of materials and algorithmsfor spin-based quantum computing and spintronics. Towards that end, it would be convenientto control the sign and magnitude of nuclear polarization as a function of position within thehost lattice. Here we show that, by exploiting different mechanisms for electron – nuclearinteraction in the optical pumping process, we are able to control and image the sign of thenuclear polarization as a function of distance from an irradiated GaAs surface. This control isachieved using a crafted combination of light helicity, intensity and wavelength, and is furthertuned via use of NMR pulse sequences. These results demonstrate all-optical creation of micronscale, rewritable patterns of positive and negative nuclear polarization in a bulk semiconductorwithout the need for ferromagnets, lithographic patterning techniques, or quantum-confinedstructures.
机译:核自旋极化的控制对于基于自旋的量子计算和自旋电子学的材料和算法的设计很重要。为此,控制核极化的符号和幅度作为宿主晶格中位置的函数将是方便的。在这里,我们表明,通过在光泵浦过程中利用电子-核相互作用的不同机制,我们能够控制和成像与从GaAs辐照表面到距离的函数的核极化迹象。此控制使用光螺旋度,强度和波长的精心组合来实现,并通过使用NMR脉冲序列进行进一步调整。这些结果表明,无需使用铁磁体,光刻构图技术或量子受限结构,即可在体半导体中全光学创建微米级,可重写的正负核极化图案和正负核极化图案。

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