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Exciton-polaritons in van der Waals heterostructures embedded in tunable microcavities

机译:嵌入可调谐微腔中的范德华异质结构中的激子极化子

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Layered materials can be assembled vertically to fabricate a new class of van der Waals heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/hexagonal boron nitride (MoSe2/hBN) quantum wells in a tunable optical microcavity. Part-light-part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe2 excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe2 monolayer, enhanced to 29 meV in MoSe2/hBN/MoSe2 double-quantum wells. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room-temperature polaritonic devices based on multiple-quantum-well van der Waals heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realized.
机译:分层材料可以垂直组装,以制造出几类原子层厚的新型范德华异质结构,可与各种基板和光电器件几何结构兼容,从而实现了控制光-质耦合的新策略。在这里,我们将二硒化钼/六方氮化硼(MoSe2 / hBN)量子阱纳入可调谐光学微腔中。 MoSe2激子与腔光子之间的强耦合导致观察到部分光-部分物质的极化子本征态,这由中性激子与腔模之间的清晰反交叉证明,单个MoSe2单层分裂为20 meV,在MoSe2 / hBN / MoSe2双量子阱中增强到29 meV。共振时的分裂提供的激子辐射寿命估计为0.4 ps。我们的结果为基于多量子阱范德华异质结构的室温极化电子器件铺平了道路,其中可以通过引入石墨烯触点实现极化子凝聚和电极化子注入。

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