Effect of CO2 Laser on SiNx Films Fabricated by Low-Temperature Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

摘要

The fabrication of effective inorganic barrier films using low-temperature processes has become an important issue in the field of flexible electronics. In this study, we investigate the characteristics of SiNx films produced by CO2 laser-assisted plasma-enhanced chemical vapor deposition at low temperature. From measurements of the thickness, surface topography, etch rate, and refractive indices, we demonstrate the enhanced quality of SiNx films fabricated by CO2 laser irradiation. Furthermore, we show that the CO2 laser irradiation is more effective on small samples, and that its effect also relies on types of substrate because their thermal conductivities affect the spread of heat originating from the CO2 laser irradiation. From the results presented here, appropriate CO2 laser configurations, selected according to the type and size of substrate, are shown to enhance the quality of SiNx films.