Electronic Properties of Microscale Reduced Graphene Oxide Patterned by Micromolding

摘要

Highly uniform reduced graphene oxide (rGO) array patterns with both stripe and square shapes have been fabricated on various substrates using PDMS based soft lithography. Morphology, structure and electrical properties of the GO patterns before and after annealing at 800 ℃ in H_2 atmosphere were investigated. The conductivity and carriers mobilities of the rGO patterns were improved by four orders after H_2-reduction. Temperature-dependent electrical measurements showed that charge transport occurs via a variable range hopping mechanism.