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Synthesis and Characterization of ZnO/Ag-Doped ZnO Core-Shell Nanowires

机译:ZnO / Ag掺杂ZnO核壳纳米线的合成与表征

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In this work, the ZnO/Ag-doped ZnO core shell nanowires were obtained through a facile threestep method, including the hydrothermal process for ZnO nanowires growth, DC sputtering for silver particles deposition on ZnO nanowires and atom layer deposition for ZnO shell layer deposition. The p-type ZnO shell layer was achieved by annealing treatment under oxygen-rich condition. Compared with ZnO and ZnO/Ag/ZnO samples, (002) diffraction peak position of ZnO/Ag-doped ZnO core shell nanowires shifted to small angle side, which indicated that Ag diffused into ZnO lattice as shell layer. Meanwhile, low-temperature photoluminescence (PL) was used to investigate the p-type emission behavior, which can be observed by exciton bound to a neutral acceptor (A X) at 3.354 eV and the recombination of free electron to the acceptor transition (FA) at 3.315 eV in such the Ag-doped ZnO shell layer. In addition, the calculated acceptor binding energy was 124 meV.
机译:在这项工作中,通过便捷的三步法获得了ZnO / Ag掺杂的ZnO核壳纳米线,包括用于ZnO纳米线生长的水热工艺,用于ZnO纳米线上沉积银粒子的直流溅射以及用于ZnO壳层沉积的原子层沉积。通过在富氧条件下进行退火处理来获得p型ZnO壳层。与ZnO和ZnO / Ag / ZnO样品相比,ZnO / Ag掺杂的ZnO核壳纳米线的(002)衍射峰位置向小角度侧偏移,表明Ag扩散到ZnO晶格作为壳层。同时,使用低温光致发光(PL)研究p型发射行为,可以通过在3.354 eV处与中性受体(AX)结合的激子和自由电子重组为受体转变(FA)来观察在这样的Ag掺杂的ZnO壳层中,电导率在3.315 eV。另外,计算的受体结合能为124meV。

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