Electroluminescence from an Electrostatically Doped Carbon Nanotube Field-Effect Transistor

摘要

We report electroluminescence (EL) from a carbon nanotube field-effect transistor with split-gates. EL is generated by the electrostatic doping technique. Six EL bands could be observed, with the strongest band peaking between 0.867 and 0.850 eV with a full width at half maximum (FWHM) of 64 to 120 meV, depending on the bias conditions. From the EL peak position we estimate a CNT diameter of similar to 1.05 nm. We also estimate the power and quantum efficiency of the EL to be around 1x10(-6) and 1x10(-5) respectively. With a fixed drain voltage, increasing the opposite split gate bias caused the EL to increase monotonically from zero, indicating an ambipolar emission mechanism. With a fixed opposite split gate bias the dependence of EL on drain voltage displays a threshold. Drain current is significantly higher when using equal, rather than opposite split gate biases, which we attribute to the trapping of carries by band bending when using opposite split gate bias.