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Picosecond photoresponse in van der Waals heterostructures

机译:范德华异质结构中的皮秒光响应

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Two-dimensional crystals such as graphene and transitionmetal dichalcogenides(1) demonstrate a range of unique and complementary optoelectronic properties(2,3). Assembling different two-dimensional materials in vertical heterostructures(4) enables the combination of these properties in one device, thus creating multifunctional optoelectronic systems with superior performance. Here, we demonstrate that graphene/WSe2/graphene heterostructures ally the high photodetection efficiency of transition-metal dichalcogenides(5,6) with a pico-second photoresponse comparable to that of graphene(7-9), thereby optimizing both speed and efficiency in a single photo-detector. We follow the extraction of photoexcited carriers in these devices using time-resolved photocurrent measurements and demonstrate a photoresponse time as short as 5.5 ps, which we tune by applying a bias and by varying the transition-metal dichalcogenide layer thickness. Our study provides direct insight into the physical processes governing the detection speed and quantum efficiency of these van der Waals heterostuctures, such as out-of-plane carrier drift and recombination. The observation and understanding of ultrafast and efficient photodetection demonstrate the potential of hybrid transition-metal dichalcogenide-based heterostructures as a platform for future optoelectronic devices.
机译:二维晶体,​​例如石墨烯和过渡金属二卤化钨(1)表现出一系列独特和互补的光电特性(2,3)。在垂直异质结构中组装不同的二维材料(4)可以将这些特性组合在一台设备中,从而创建具有卓越性能的多功能光电系统。在这里,我们证明了石墨烯/ WSe2 /石墨烯的异质结构可以使过渡金属二卤化物(5,6)的光探测效率与石墨烯(7-9)相当,具有皮秒的光响应,从而优化了碳纳米管的速度和效率单个光电探测器。我们使用时间分辨的光电流测量方法来跟踪这些设备中光激发载流子的提取,并演示了短至5.5 ps的光响应时间,我们可以通过施加偏压和改变过渡金属二卤化硅层厚度来对其进行调整。我们的研究提供了直接控制这些范德华异质结构检测速度和量子效率的物理过程的信息,例如平面外载流子漂移和复合。对超快速高效光电检测的观察和理解表明,基于混合过渡金属二卤化二异氰酸酯的异质结构作为未来光电器件平台的潜力。

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