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Field emission properties of carbon coated Si nanocone arrays on porous silicon

机译:多孔硅上碳包覆的硅纳米锥阵列的场发射特性

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Silicon nanocone arrays are formed on porous silicon substrates by plasma etching in a hot filament chemical vapour deposition system. The as-formed Si nanocones were characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. The results indicate that the nanocone is composed of a silicon core coated with a thin amorphous carbon (a-C) layer produced by carbon-bearing plasma etching. Plasma etching is a key factor in the formation of the nanocone arrays, while re-condensation of evaporated silicon atoms on the tip of the as-etched cone also occurs. Field emission measurements show that the a-C coating can effectively enhance the field emission ability of the nanocone arrays due to the decrease of the surface work function from 4.15 to 2.37 eV.
机译:硅纳米锥阵列通过在热丝化学气相沉积系统中的等离子体蚀刻形成在多孔硅基板上。通过扫描电子显微镜,高分辨率透射电子显微镜,能量色散X射线分析和拉曼光谱对形成的Si纳米锥进行表征。结果表明,纳米锥由硅芯组成,硅芯上涂有一层薄的无定形碳(a-C)层,该层是通过含碳等离子体蚀刻产生的。等离子体刻蚀是形成纳米锥阵列的关键因素,同时也会发生蒸发的硅原子在刻蚀后的锥头上重新凝聚。场发射测量表明,由于表面功函数从4.15 eV降低到2.37 eV,a-C涂层可以有效增强纳米锥阵列的场发射能力。

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