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首页> 外文期刊>Nanotechnology >Photopatterning of self-assembled monolayers at 244 nm and applications to the fabrication of functional microstructures and nanostructures
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Photopatterning of self-assembled monolayers at 244 nm and applications to the fabrication of functional microstructures and nanostructures

机译:自组装单分子膜在244 nm处的光图案化及其在功能性微结构和纳米结构制造中的应用

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摘要

Self-assembled monolayers (SAMs) of alkanethiols have been patterned on micrometre and nanometre length scales by exposure to light from a frequency doubled argon ion laser. Friction force microscopy shows that the patterning speed depends on the nature of the terminal group and is in the order COOH > CH_3, the reverse of the order reported previously using a mercury arc lamp, indicating that a different photo-oxidation mechanism is responsible. It is suggested that this involves the creation of hot electrons at the gold surface that initiate oxidation of the adsorbate. Nanostructures have been fabricated using scanning near-field photolithography (SNP), in which the UV laser is coupled to a near-field scanning optical microscope. During SNP, the rates of writing required for complete oxidation correlate closely with oxidation rates measured during micropatterning, suggesting that the mechanism is essentially the same. SAMs on silver have been patterned, yielding linewidths smaller than 50 nm. The selective alkylation of hydrogen passivated Si has been demonstrated, yielding structures that may be used as resists for etching and demonstrating a powerful new capability-fluid-phase nanophotolithography. Patterned SAMs prepared using SNP have been used to selectively attach polymer nanoparticles, demonstrating their utility for the creation of functional molecular nanostructures. Nanopatterns generated by SNP have also been used as resists, enabling the etching of nanostructures into gold and the fabrication of three-dimensional nanostructures in silicon using a two-stage wet etch process.
机译:链烷硫醇的自组装单分子层(SAMs)已通过暴露于倍频氩离子激光器的光而在微米和纳米级尺度上进行了图案化。摩擦力显微镜显示,构图速度取决于端基的性质,其顺序为COOH> CH_3,与先前使用汞弧灯报告的顺序相反,表明产生了不同的光氧化机理。建议这涉及在金表面上产生热电子,该热电子引发被吸附物的氧化。纳米结构已经使用扫描近场光刻(SNP)制成,其中UV激光耦合到近场扫描光学显微镜。在SNP期间,完全氧化所需的写入速率与微图案化过程中测得的氧化速率紧密相关,这表明该机理基本相同。银上的SAM已被图案化,产生的线宽小于50 nm。已经证明了氢钝化的硅的选择性烷基化,产生了可用作蚀刻的抗蚀剂的结构,并展示了强大的新型能力-流体相纳米光刻技术。使用SNP制备的图案化SAM已用于选择性连接聚合物纳米颗粒,证明了其在创建功能分子纳米结构中的效用。由SNP产生的纳米图案也已用作抗蚀剂,从而可以使用两步湿法蚀刻工艺将纳米结构蚀刻成金,并在硅中制造三维纳米结构。

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