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Improving gas sensing properties of graphene by introducing dopants and defects: a first-principles study

机译:通过引入掺杂剂和缺陷改善石墨烯的气敏特性:一项第一性原理研究

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The interactions between four different graphenes (including pristine, B-or N-doped and defective graphenes) and small gas molecules (CO, NO, NO_2 and NH_3) were investigated by using density functional computations to exploit their potential applications as gas sensors. The structural and electronic properties of the graphene–molecule adsorption adducts are strongly dependent on the graphene structure and the molecular adsorption configuration. All four gas molecules show much stronger adsorption on the doped or defective graphenes than that on the pristine graphene. The defective graphene shows the highest adsorption energy with CO, NO and NO_2 molecules, while the B-doped graphene gives the tightest binding with NH3. Meanwhile, the strong interactions between the adsorbed molecules and the modified graphenes induce dramatic changes to graphene's electronic properties. The transport behavior of a gas sensor using B-doped graphene shows a sensitivity two orders of magnitude higher than that of pristine graphene. This work reveals that the sensitivity of graphene-based chemical gas sensors could be drastically improved by introducing the appropriate dopant or defect. Supplementary data are available from stacks.iop.org/Nano/20/185504
机译:通过使用密度泛函计算研究了四种不同石墨烯(包括原始的,B或N掺杂的和有缺陷的石墨烯)与小气体分子(CO,NO,NO_2和NH_3)之间的相互作用,以利用它们作为气体传感器的潜在应用。石墨烯-分子吸附加合物的结构和电子性质在很大程度上取决于石墨烯的结构和分子的吸附构型。与原始石墨烯相比,所有四种气体分子在掺杂或有缺陷的石墨烯上均表现出强得多的吸附。有缺陷的石墨烯在CO,NO和NO_2分子上显示出最高的吸附能,而B掺杂的石墨烯与NH3的结合最紧密。同时,吸附分子与改性石墨烯之间的强相互作用引起石墨烯电子性能的巨大变化。使用B掺杂石墨烯的气体传感器的传输行为显示出比原始石墨烯高两个数量级的灵敏度。这项工作表明,通过引入适当的掺杂剂或缺陷,可以大大提高基于石墨烯的化学气体传感器的灵敏度。补充数据可从stacks.iop.org/Nano/20/185504获得

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