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Mapping nanometer-scale temperature gradients in patterned cobalt-nickel silicide films

机译:绘制图案化钴镍硅化物薄膜中的纳米尺度温度梯度图

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摘要

We have implemented a thermal mapping technique, scanning Joule expansion microscopy, with a high spatial resolution (about 20 nm) in order to investigate heat generation and dissipation in mesoscopic thin-film structures. In particular, we investigated narrow cobalt-nickel silicide lines having a granular morphology. We are able to directly visualize heating of the silicide in between the grains due to a local increase of the resistance, resulting in current crowding. The increase in resistance can be associated with a local reduction of the silicide thickness in between the larger grains. On the other hand, an enhanced silicide resistivity at grain boundaries may also contribute to the resistance changes.
机译:为了研究介观薄膜结构中的热量产生和耗散,我们已经实现了具有高空间分辨率(约20 nm)的热成像技术,扫描焦耳膨胀显微镜。特别地,我们研究了具有颗粒形态的窄钴镍硅化物线。由于电阻的局部增加,我们能够直接看到晶粒间硅化物的加热,从而导致电流拥挤。电阻的增加可能与较大晶粒之间硅化物厚度的局部减小有关。另一方面,晶界处提高的硅化物电阻率也可能有助于电阻变化。

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