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Direct synthesis of suspended single-walled carbon nanotubes crossing plasma sharpened carbon nanofibre tips

机译:穿过等离子体锐化的碳纳米纤维尖端的悬浮单壁碳纳米管的直接合成

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Herein we report a method for the direct synthesis of suspended single-walled carbon nanotubes (su-SWNTs) using carbon nanofibres (CNFs) as templates via a three-step fabrication process. Plasma-enhanced chemical vapour deposition was first employed to grow vertically aligned CNFs, which were then post-treated with an energetic argon plasma in the same reactor to yield structural transformation by sharpening tips and reducing embedded catalytic nanoparticles to favourable sizes, presumably below 10 nm. A thermal chemical vapour deposition process subsequently followed, for directly synthesizing SWNTs suspended across the tips or sidewalls of post-treated CNFs (PT-CNFs) with a span up to 10 mu m. We also demonstrated that one can maximize the yield of su-SWNTs on the tips of PT-CNFs by optimizing the post-treatment conditions to provide a protective coating which suppresses the growth of SWNTs from sidewalls. In this approach, no further catalyst deposition is needed after the nanostructured PT-CNF template is formed. Thus, su-SWNTs can be selectively positioned on the tips of PT-CNFs with a clean substrate surface free from unwanted CNTs and with a suspension span not limited by the flow conditions of the carbon source gas. This method of fabricating su-SWNTs can be extended to position a single isolated SWNT for the purpose of either minimizing the environmental perturbation during SWNT characterization or enhancing the performance in nanodevice applications.
机译:本文中,我们报告了一种通过三步制造工艺,使用碳纳米纤维(CNF)作为模板直接合成悬浮单壁碳纳米管(su-SWNTs)的方法。首先使用等离子增强化学气相沉积法来生长垂直排列的CNF,然后在同一反应器中用高能氩等离子体对其进行后处理,以通过锐化尖端并将嵌入的催化纳米粒子减小至合适的尺寸(大概低于10 nm)来产生结构转变。随后进行热化学气相沉积过程,以直接合成悬浮在后处理CNF(PT-CNF)的尖端或侧壁上的SWNT,跨度最大为10微米。我们还证明,通过优化后处理条件以提供一种可抑制侧壁上SWNT生长的保护涂层,可以使PT-CNF尖端上的su-SWNT的产量最大化。以这种方法,在形成纳米结构的PT-CNF模板之后,不需要进一步的催化剂沉积。因此,可以将su-SWNT选择性地放置在PT-CNF的尖端上,使其具有干净的基材表面,不含不需要的CNT,并且悬浮范围不受碳源气体流动条件的限制。可以将这种制造su-SWNT的方法扩展为放置单个隔离的SWNT,以最小化SWNT表征过程中的环境扰动或增强纳米器件应用的性能。

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