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Temperature-controlled growth of ZnO nanostructures: branched nanobelts and wide nanosheets

机译:ZnO纳米结构的温度控制生长:支链纳米带和宽纳米片

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摘要

ZnO nanostructures with different morphologies have been achieved by simple thermal evaporation of mixed powders of ZnS, graphite and SnO_2 at 1050 deg C in a flowing Ar atmosphere. Branched nanobelts and wide nanosheets of ZnO were formed on Si wafers at a temperature of 700 and 500 deg C, respectively. As for the branched nanobelts, there exist nanotwins along the axial direction of the stem belts, and a definite included angle about 70 deg between the stem and the branch. In contrast, the wide nanosheets have a rectangle-like cross-section with typical widths of 200 nm to several micrometres and lengths of up to tens of micrometres. Photoluminescence measurements reveal that the branched nanobelts and wide nanosheets have visible green emission bands at about 530 and 510 nm, respectively. The branched ZnO nanobelts have potential for building optoelectronic nanodevices with special configurations, and the ZnO nanosheets might be used in nanoscale sensors.
机译:通过在流动的Ar气氛中在1050摄氏度下简单地热蒸发ZnS,石墨和SnO_2的混合粉末,可以实现具有不同形态的ZnO纳米结构。分别在700和500摄氏度的温度下在Si晶片上形成ZnO的分支纳米带和宽纳米片。至于分支的纳米带,沿着茎带的轴向存在纳米孪晶,并且茎和分支之间存在约70度的确定夹角。相反,宽的纳米片具有矩形状的横截面,其典型的宽度为200nm至数微米,而长度则高达数十微米。光致发光测量表明,分支的纳米带和宽的纳米片分别在约530和510 nm处具有可见的绿色发射带。分支的ZnO纳米带具有构建具有特殊配置的光电纳米器件的潜力,并且ZnO纳米片可用于纳米级传感器。

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