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Fabrication of a high anisotropy nanoscale patterned magnetic recording medium for data storage applications

机译:用于数据存储的高各向异性纳米图案化磁记录介质的制造

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摘要

An approach to fabrication of a patterned magnetic recording medium for next generation data storage systems is presented. (Co/Pd)_n magnetic multilayers are evaluated as candidates for patterned medium materials for their high and easily controllable magnetic anisotropy. The multilayer films deposited on a Ta seed layer enable high intergranular exchange coupling-an essential feature of a patterned magnetic recording medium. The quality of (Co/Pd)_n superlattices was optimized via deposition conditions and monitored using low-angle x-ray diffraction. An estimated in-plane (hard-axis) magnetization saturation field in excess of 40 000 Oe was observed. Vertical (easy-axis) hysteresis loops for as-deposited continuous magnetic multilayers exhibited a low coercivity of 930 Oe, indicating highly uniform (magnetically) films with weak domain wall pinning. Ion-beam proximity lithography was used to pattern magnetic multilayers into 43 nm islands on a 135 nm pitch. Following patterning, easy-axis coercivity increased nearly 15-fold to 12.7 kOe.
机译:提出了一种用于下一代数据存储系统的图案化磁记录介质的制造方法。 (Co / Pd)_n磁性多层由于其高且易于控制的磁各向异性而被评估为图案化介质材料的候选材料。沉积在Ta籽晶层上的多层膜可实现高晶间交换耦合-图案化磁记录介质的基本特征。通过沉积条件优化(Co / Pd)_n超晶格的质量,并使用低角度X射线衍射进行监测。观察到的平面内(硬轴)磁化饱和场超过40 000 Oe。沉积的连续磁性多层膜的垂直(易轴)磁滞回线显示出930 Oe的低矫顽力,这表明具有弱畴壁钉扎的高度均匀(磁性)薄膜。使用离子束接近光刻技术以135 nm的间距将磁性多层图案化为43 nm的岛。图案化后,易轴矫顽力提高了近15倍,达到12.7 kOe。

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