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Ferroelectric nanostructures via a modified focused ion beam technique

机译:通过改进的聚焦离子束技术的铁电纳米结构

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In this paper we demonstrate a modified focused ion beam (FIB) milling approach integrated with self-alignment to synthesize ferroelectric nanostructures. Nanoscale holes ranging from 500 nm down to 100 nm in diameter are created on 'spun-on' amorphous TiO_2 on Pt/TiO_2/Si using FIB milling. It is found that spin-coating of PbZr_(0.4)Ti_(0.6)O_3 (PZT) sol-gel precursors on these templated surfaces followed by low-temperature (approx 400 deg C) annealing leads to a ferroelectric phase only within the holes. Piezoresponse force microscopy (PFM) was used to confirm that the crystallized phase within the holes were ferroelectric and switchable. The smallest lateral size shown to be ferroelectric is roughly 70-80 nm in diameter. Quantitative PFM of the nanoscale ferroelectric regions yielded a value of 17 pm V~(-1), in good agreement with previously published data on polycrystalline PZT. Additionally this method facilitates the integration of interlayer dielectrics or 'spun-on' glass during the synthesis without the need for additional lithography and processing.
机译:在本文中,我们演示了一种改进的聚焦离子束(FIB)铣削方法,该方法与自对准相集成以合成铁电纳米结构。使用FIB铣削在Pt / TiO_2 / Si上的“旋涂”非晶TiO_2上创建了直径范围从500 nm到100 nm的纳米级孔。发现在这些模板化表面上旋涂PbZr_(0.4)Ti_(0.6)O_3(PZT)溶胶-凝胶前体,然后进行低温(约400摄氏度)退火,仅在孔内形成铁电相。压电响应显微镜(PFM)用于确认孔内的结晶相是铁电的且可切换的。显示为铁电的最小横向尺寸的直径约为70-80 nm。纳米级铁电区域的定量PFM得出的值为17 pm V〜(-1),与先前发表的有关多晶PZT的数据非常吻合。另外,该方法在合成过程中有利于层间电介质或“旋涂”玻璃的集成,而无需额外的光刻和工艺。

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