Algrithms for calculating single-atom step heights

摘要

Recently, our work on the measurement of Si(111)single atomic steps has prompted us to investigate the algorithmfor the calculation of a one-sided step height. We compared theresults of a two-point subtraction and a histogram techniqueunder different conditions of surface tilt with respect to themeasuring frame. By evaluating a simulated Si(111) atomic step,we found its calculated height could deviate from the true valueas high as 2% due to a misalignment of the measuring axis andsample axis of 0.1°.