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Growth of uniformly aligned nanorod arrays by oblique angle deposition with two-phase substrate rotation

机译:通过两相基板旋转倾斜角沉积生长均匀排列的纳米棒阵列

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Due to the shadowing effect, the oblique angle deposition technique can produce nanorods tilted toward the incident deposition flux. Periodic posts serving as seeds on a substrate allow the fabrication of nanorod arrays with controllable separations. However, in a conventional oblique angle deposition with no substrate rotation, nanorods grow faster along their widths in the direction perpendicular to the plane of incident flux. This anisotropic growth can result in 'fan-out' shapes of nanorods that touch each other due to the faster growing widths. Asymmetric two-phase substrate rotation was designed to eliminate the side growth in oblique angle deposition. In this method, the growing rods are exposed to the deposition flux from all angles with some portion of a rod surface receiving more flux than the rest. We fabricated well-aligned Si nanorod arrays with uniform sizes from templates arranged in square and triangular lattices using this two-phase substrate rotation method.
机译:由于遮蔽效应,倾斜角沉积技术可以产生朝入射沉积通量倾斜的纳米棒。用作基质上的种子的周期性柱允许制造具有可控间隔的纳米棒阵列。然而,在没有基板旋转的常规倾斜角沉积中,纳米棒在垂直于入射通量平面的方向上沿着其宽度更快地生长。这种各向异性的生长会导致纳米棒的“扇形”形状,因为它们的宽度增长得更快。设计不对称的两相基板旋转以消除倾斜角沉积中的侧面生长。在这种方法中,生长中的杆从各个角度暴露于沉积通量,而杆表面的某些部分比其余部分接收更多的通量。我们使用这种两相基片旋转方法,从以正方形和三角形晶格排列的模板制造出大小一致,排列均匀的硅纳米棒阵列。

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