...
首页> 外文期刊>Nanotechnology >Space charge effects in field emission nanodevices
【24h】

Space charge effects in field emission nanodevices

机译:场发射纳米器件中的空间电荷效应

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Electron field emission from a single nanoemitter is a barrier tunneling, quantum mechanical process that can, therefore, be described by the well-known Fowler–Nordheim (FN) equation. At high emission current densities, however, the space charge caused by the cathode may affect the current density–voltage (J–V ) characteristics predicted by the FN theory. In this study, we theoretically investigated the effect of space charge on FE nanodevices, including diode and triode structures. The J–V characteristics of FE nanodevices were obtained by analytically (diode structures) or numerically (triode structures) solving the coupled FN equation and Poisson’s equation. We discuss the behavior of FE nanodiodes and nanotriodes displaying different geometries, dimensions and work functions of their emitter materials. In the high current density region, space charge plays an important role in FE nanodevices; the threshold current density of space–charge limitation is related to the electric field distributions. Besides, our theoretical results are in good agreement with the experimental results reported previously.
机译:来自单个纳米发射体的电子场发射是一种势垒隧穿,量子力学过程,因此可以用众所周知的Fowler-Nordheim(FN)方程来描述。然而,在高发射电流密度下,由阴极引起的空间电荷可能会影响FN理论所预测的电流密度-电压(J-V)特性。在这项研究中,我们从理论上研究了空间电荷对FE纳米器件(包括二极管和三极管结构)的影响。通过分析(二极管结构)或数值(二极管结构)求解耦合的FN方程和Poisson方程,可获得FE纳米器件的J–V特性​​。我们讨论了FE纳米二极管和纳米三极管的行为,这些行为显示了其发射极材料的不同几何形状,尺寸和功函数。在高电流密度区域,空间电荷在FE纳米器件中起着重要的作用。空间电荷极限的阈值电流密度与电场分布有关。此外,我们的理论结果与先前报道的实验结果非常吻合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号