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A kelvin probe force microscopy of charged indentation-induced dislocation structures in KBr

机译:开尔文探针力显微镜观察带电压痕诱发的KBr位错结构

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摘要

The incipient stages of plasticity in KBr single crystals have been examined in ultra-high vacuum by means of atomic force microscopy and Kelvin probe force microscopy (KPFM). Conducting diamond-coated tips have been used to both indent the crystals and image the resulting plastic deformation. KPFM reveals that edge dislocations intersecting the surface carry a negative charge similarly to kinks in surface steps, while screw dislocations show no contrast. The charges are attributed to trapped cation vacancies which compensate the charge of divalent impurities. Furthermore, the site of indentation has been found to carry a large positive charge. Weak topographic features extending in the 110 direction from the indentation are identified by atomic-resolution imaging to be pairs of edge islocations of opposite sign, separated by a distance similar to the indenter radius. They indicate the glide of two parallel {110} planes perpendicular to the surface, a process which allows for a slice of KBr to be pushed away from the indentation site.
机译:已经通过原子力显微镜和开尔文探针力显微镜(KPFM)在超高真空下检查了KBr单晶的可塑性初期。导电的金刚石涂层尖端已被用来使晶体压痕并成像所产生的塑性变形。 KPFM显示,与表面相交的边缘位错与表面台阶中的扭结类似,带有负电荷,而螺钉位错则没有对比。电荷归因于捕获的阳离子空位,其补偿了二价杂质的电荷。此外,已经发现压痕部位带有大的正电荷。从压痕沿110方向延伸的弱地形特征被原子分辨率成像识别为相反符号的边缘等位线对,相距的距离类似于压头半径。它们表示垂直于表面的两个平行{110}平面的滑动,此过程允许将KBr切片从压痕位置推出。

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