Implementation of complex nanosystems using a versatile ultrahigh vacuum nonlithographic technique

摘要

We have developed an ultrahigh vacuum technique for the implementation of complex nanosystems incorporating nonlithographic nanoparticles, ohmic contact metals and isolation dielectrics. The technique is compatible with the silicon integrated circuit manufacturing process and is versatile, allowing the deposition of nanoparticles of any metal, semiconductor or insulator with diameters as small as 2 nm with less than 5 percent size variation. In addition, the technique allows the creation of multi-layered structures of nanoparticles of different dimensions. The flexibility and the versatility of the technique have been demonstrated by depositing nanoparticles of various materials as well as fabricating multi-layered structures incorporating nanoparticles.