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首页> 外文期刊>Nanotechnology >Crystal structures and transistor properties of phenyl-substituted tetrathiafulvalene derivatives
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Crystal structures and transistor properties of phenyl-substituted tetrathiafulvalene derivatives

机译:苯基取代的四硫富瓦烯衍生物的晶体结构和晶体管性能

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摘要

The crystal structures, thin-film properties, and field-effect transistor (FET) characteristics of tetrathiafulvalene (TTF) derivatives with two phenyl groups are systematically investigated. The highest mobility, 0.11 cm~2 V~(-1) s~(-1), is observed in biphenyl-substituted TTF (1). The correlation between the crystal structures and the FET properties demonstrates that good transistor properties are associated with two-dimensional intermolecular interaction, which is achieved when the molecules are standing nearly perpendicular to the substrate. Since these TTF derivatives are strong electron donors, the use of a metallic charge-transfer salt (TTF)(TCNQ) as the source and drain electrodes has resulted in a considerable reduction of the off current (TCNQ: tetracyanoquinodimethane).
机译:系统地研究了具有两个苯基的四硫富瓦烯(TTF)衍生物的晶体结构,薄膜特性和场效应晶体管(FET)特性。在联苯取代的TTF(1)中观察到最高的迁移率0.11 cm〜2 V〜(-1)s〜(-1)。晶体结构与FET特性之间的相关性表明,良好的晶体管特性与二维分子间相互作用相关,这是当分子几乎垂直于基板站立时实现的。由于这些TTF衍生物是强电子给体,因此使用金属电荷转移盐(TTF)(TCNQ)作为源电极和漏电极可显着降低截止电流(TCNQ:四氰基喹二甲烷)。

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