The formation of submicron structures on the surface of amorphous silicon films by nanosecond pulsed radiation of a laser line generator

摘要

The experimental results that were shown for the first time in this article concern the formation of nanostructures on the surface of amorphous silicon films deposited on the dielectric substrate under the influence of a laser beam swept in the form of a narrow line. Laser scanning was performed at a constant speed and at different power values with a radiation wavelength of 532 nm. The conditions of laser processing, when the aspect ratio of submicron structures on the surface of amorphous silicon film is the highest possible, were experimentally determined.