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An azanorbornadiene anchor for molecular-level construction on silicon(100)

机译:用于在硅上进行分子水平构建的氮杂降冰片二烯锚(100)

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N-trimethylsilyl-7-azanorbornadiene (TMSAN) is synthesized and chemisorbed on the silicon(100)-2 X 1 surface under ultra-high vacuum conditions and the resulting structure is determined using scanning tunnelling microscopy (STM). The binding exhibits poor short-range order, similar to that for norbornadiene. Patterning of the adsorb ate is demonstrated following STM electron-stimulated depassivation of a silicon(100)-2 X 1-H surface, indicating that the placement of TMSAN on the surface can be controlled. Density-functional theory (DFT) calculations verify the close analogy between the binding of TMS AN and its much studied parent compound, norbornadiene. This analogue is novel, however, in that it can provide anchor points for construction at the molecular level above the silicon surface. How such construction could proceed is controlled by the topology of the nitrogen atom and the torsional potential for rotation about the N-Si bond. While these key features are not readily apparent from the STM results, DFT predicts that TMSAN above silicon(100) adopts a structure containing an azimuthal rotor: the nitrogen atom is in a planar configuration so that the N-Si bond is normal to the silicon surface, there being also nearly free rotation about the N-Si bond. Further, variants of TMSAN are considered in which a double-well potential for nitrogen inversion is predicted, suggesting that chemical control can be established over the architectural function of this class of compounds.
机译:合成了N-三甲基甲硅烷基-7-氮杂降冰片二烯(TMSAN)并在超高真空条件下化学吸附在硅(100)-2 X 1表面,并使用扫描隧道显微镜(STM)确定了所得结构。结合表现出差的短程有序,类似于降冰片二烯。 STM(Si)(100)-2 X 1-H表面经过STM电子刺激的钝化处理后,证明了吸附物的图案,这表明可以控制TMSAN在表面上的位置。密度泛函理论(DFT)的计算证明了TMS AN与它研究很多的母体化合物降冰片二烯的结合紧密相似。然而,这种类似物是新颖的,因为它可以提供在硅表面上方分子水平上构建的锚定点。氮原子的拓扑结构和围绕N-Si键旋转的扭转势能控制着这种构造的进行方式。虽然这些关键特征从STM结果中并不容易看出,但DFT预测,硅(100)上方的TMSAN采用包含方位角转子的结构:氮原子处于平面构型,因此N-Si键垂直于硅表面上,N-Si键也几乎自由旋转。此外,考虑到TMSAN的变体,其中预测了氮转化的双井潜力,这表明可以对这类化合物的结构功能建立化学控制。

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