Size-dependent oriented attachment in the growth of pure and defect-free hexagonal boron nitride nanocrystals

摘要

Pure and defect-free hexagonal boron nitride (hBN) nanocrystals with deep-ultraviolet light emissions at around 215nm were prepared via a solid state reaction. This involved preparing a precursor from potassium borohydride and ammonium chloride powders, and then heating the precursor and additional ammonium chloride to 1000 °C within a nitrogen atmosphere. The hBN nanocrystals were studied using a variety of characterization techniques (e.g., TEM, AFM, N_2 absorption/desorption). A growth mechanism based on size-dependent oriented attachment was proposed for the nanocrystals.