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A Monte Carlo Simulation of the Processes of Nanostructure Growth: The Time-Scale Event-Scheduling Algorithm

机译:纳米结构生长过程的蒙特卡洛模拟:时标事件调度算法

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摘要

The SilSim3D program package is developed to conduct Monte Carlo simulations of the kinetics of growth, evaporation, and annealing of thin layers on solid substrates on the basis of an original algorithm of scheduling events on areal time scale. The model allows the simulation of various nanoelectronic technological processes in multicomponent physical and chemical systems of more than 107 particles in time intervals com-parable with the actual experimental times. The initial stages of atomic layer deposition and the growth of sil-icon nanowhiskers are simulated as an example.
机译:SilSim3D程序包的开发是在面积时间尺度上安排事件的原始算法的基础上,对固体基板上薄层的生长,蒸发和退火动力学进行蒙特卡洛模拟。该模型允许在多组分物理和化学系统中以与实际实验时间相比的时间间隔对107个以上粒子的多纳米电子技术过程进行仿真。以原子层沉积的初始阶段和硅纳米须晶的生长为例。

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