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A novel method for preparing carbon-coated germanium nanowires

机译:一种制备碳包覆锗纳米线的新方法

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摘要

Single-crystalline Ge nanowires covered with amorphous carbon were synthesized by using GeO2 as the Ge source and reacting it with a mixed gas Of C2H4 and NH3 at 750 degrees C. Electron microscopy studies show that the nanowires have a diameter distribution ranging from 15 to 50 nm and a length up to tens of micrometres. The growth mechanism of the Ge nanowires could be attributed to the well known vapour-liquid-solid (VLS) catalytic growth process promoted by nanoparticles attached at the end of the nanowires.
机译:以GeO2为Ge源,使其与C2H4和NH3的混合气体在750℃下反应,合成了覆盖无定形碳的单晶Ge纳米线。电子显微镜研究表明,纳米线的直径分布范围为15至50纳米和长达数十微米的长度。 Ge纳米线的生长机理可以归因于由附着在纳米线末端的纳米颗粒促进的众所周知的蒸气-液体-固体(VLS)催化生长过程。

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