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首页> 外文期刊>Nanotechnology >Fabrication and characterization of high-T-c YBa2Cu3O7-x nanoSQUIDs made by focused ion beam milling
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Fabrication and characterization of high-T-c YBa2Cu3O7-x nanoSQUIDs made by focused ion beam milling

机译:聚焦离子束铣削制备高T-c YBa2Cu3O7-x nanoSQUIDs及其表征

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摘要

We have fabricated high-T-c nanoscale superconducting quantum interference devices (nanoSQUIDs) with a hole size of 250 nm x 250 nm based on a 100 nm bridge at 77 K by focused ion beam milling and ion implantation. At 78 K, the curve of the voltage branch became roughly linear and agreed with the Josephson-like behavior. The sample exhibited strong flux flow behavior at temperatures under 76 K. The voltage flux characteristic curves, V-I-mod, of the nanoSQUID at different bias currents at 78 K were observed. Typically, critical currents of 15 mu A and peak-to-peak values of the voltage flux transfer function of 3.7 mu V were measured. The measured data strongly suggest that the weak link structure could be a superconducting metal with a critical temperature T-c' smaller than that (T-c) of other YBa2Cu3O7-x (YBCO) films. This fabrication method of combining a nanobridge and ion implantation can improve the yield of nanojunctions and nanoSQUIDs.
机译:我们通过聚焦离子束铣削和离子注入,基于100 nm电桥,在77 K上制造了孔径为250 nm x 250 nm的高T-c纳米级超导量子干涉器件(nanoSQUID)。在78 K时,电压支路的曲线大致呈线性,并与类似约瑟夫森的行为一致。样品在76 K以下的温度下表现出较强的通量流动特性。在78 K的不同偏置电流下,观察到了nanoSQUID的电压通量特性曲线V-I-mod。通常,测得的临界电流为15μA,电压通量传递函数的峰峰值为3.7μV。测量数据强烈表明,弱连接结构可能是临界温度T-c'小于其他YBa2Cu3O7-x(YBCO)膜的临界温度T-c'的超导金属。这种结合纳米桥和离子注入的制造方法可以提高纳米结和nanoSQUID的产量。

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