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Fabrication and electrical properties of a Cu-tetracyanoquinodimethane nanowire array in a porous anodic alumina template

机译:多孔阳极氧化铝模板中Cu-四氰基对二甲烷甲烷纳米线阵列的制备和电性能

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摘要

A nanowire array of metal-organic complex copper-tetracyanoquinodimethane (CuTCNQ) was obtained by depositing a layer of copper in the bottom of anodic alumina template channels during a vapor-induced reaction method. SEM observation showed that the channel diameters of anodic alumina membranes prepared under 40 V and 200 V are about 60 nm and 200 nm, respectively, and CuTCNQ nanowire arrays were synthesized in these channels. Nanodevice prototypes with electrical switching characteristics based on a CuTCNQ nanowire array were fabricated, whose reproducible electrical switching and memory effects were observed. The on-off ratio for switching reaches 10(4). The potential applications in information storage devices are also discussed.
机译:通过在气相诱导反应方法中在阳极氧化铝模板通道底部沉积一层铜,获得了金属-有机络合物铜-四氰基喹二甲烷(CuTCNQ)的纳米线阵列。 SEM观察表明,在40 V和200 V下制备的阳极氧化铝膜的通道直径分别约为60 nm和200 nm,并且在这些通道中合成了CuTCNQ纳米线阵列。制备了具有基于CuTCNQ纳米线阵列的电开关特性的纳米器件原型,观察了其可再现的电开关和记忆效应。开关的通断比达到10(4)。还讨论了信息存储设备中的潜在应用。

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