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Heat conduction across monolayer and few-layer graphenes

机译:跨单层和多层石墨烯的热传导

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We report the thermal conductance G of Au/Ti/graphene/SiO_2 interfaces (graphene layers 1 ≤ n ≤ 10) typical of graphene transistor contacts. We find G ≈ 25 MW m~(-2) K~(-1) at room temperature, four times smaller than the thermal conductance of a Au/Ti/ SiO_2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO_2 interfaces acting in series. The temperature dependence of G from 50 ≤ T ≤ 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings suggest that metal contacts can limit not only electrical transport but also thermal dissipation from submicrometer graphene devices.
机译:我们报告了典型的石墨烯晶体管触点的Au / Ti /石墨烯/ SiO_2界面(石墨烯层1≤n≤10)的导热系数G。我们发现在室温下G≈25 MW m〜(-2)K〜(-1),即使当n = 1时,也比Au / Ti / SiO_2界面的热导小四倍。 Au / Ti /石墨烯和石墨烯/ SiO_2界面的串联热阻。 G从50≤T≤500 K的温度依赖性还表明,声子主要通过这些界面传导热量。我们的发现表明,金属触点不仅会限制电传输,而且还会限制亚微米石墨烯器件的散热。

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