...
首页> 外文期刊>Nano letters >p-n semiconductor membrane for electrically tunable ion current rectification and filtering
【24h】

p-n semiconductor membrane for electrically tunable ion current rectification and filtering

机译:用于电可调离子电流整流和滤波的p-n半导体膜

获取原文
获取原文并翻译 | 示例

摘要

We show that a semiconductor membrane made of two thin layers of opposite (n- and p-) doping can perform electrically tunable ion current rectification and filtering in a nanopore. Our model is based on the solution of the 3D Poisson equation for the electrostatic potential in a double-cone nanopore combined with a transport model. It predicts that, for appropriate biasing of the membrane-electrolyte system, transitions from ohmic behavior to sharp rectification with vanishing leakage current are achievable. Furthermore, ion current rectifying and filtering regimes of the nanopore correspond to different charge states in the p-n membrane, which can be tuned with appropriate biasing of the n- and p- layers.
机译:我们表明,由两个相反(n和p)掺杂的薄层制成的半导体膜可以在纳米孔中进行电可调的离子电流整流和过滤。我们的模型基于双锥纳米孔中3D泊松方程的静电势解和输运模型。它预测,对于适当的膜电解质系统偏置,可以实现从欧姆行为到消失电流消失的急剧整流。此外,纳米孔的离子电流整流和过滤方式对应于p-n膜中的不同电荷状态,可以通过适当偏置n-层和p-层来对其进行调节。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号