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Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition

机译:通过化学气相沉积法在任意基板上制备大面积,很少层的石墨烯薄膜

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摘要

In this work we present a low cost and scalable technique, via ambient pressure chemical vapor deposition (CVD) on polycrystalline Ni films, to fabricate large area (similar to cm(2)) films of single- to few-layer graphene and to transfer the films to nonspecific substrates. These films consist of regions of 1 to similar to 12 graphene layers. Single- or bilayer regions can be up to 20 mu m in lateral size. The films are continuous over the entire area and can be patterned lithographically or by prepatterning the underlying Ni film. The transparency, conductivity, and ambipolar transfer characteristics of the films suggest their potential as another materials candidate for electronics and opto-electronic applications.
机译:在这项工作中,我们通过在多晶Ni膜上进行环境压力化学气相沉积(CVD),提出了一种低成本且可扩展的技术,以制造大面积(类似于cm(2))的单层至数层石墨烯膜并转移将膜粘贴到非特定基材上。这些薄膜由1到类似于12个石墨烯层的区域组成。单层或双层区域的横向尺寸最大为20微米。该膜在整个区域上是连续的,并且可以通过光刻或通过对下面的Ni膜进行预构图来进行构图。薄膜的透明性,导电性和双极性转移特性表明它们有潜力作为电子和光电应用的另一种候选材料。

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