Correlated random telegraph signal and low-frequency noise in carbon nanotube transistors

摘要

A correlated random telegraph signal is observed from the interaction of two individual defects in a carbon nanotube transistor. It is shown that the amplitude fluctuation of one defect significantly depends on the state of the other defect. Moreover, statistics of the correlated switchings is shown to deviate from the ideal Poisson process. Physics of this random telegraph signal correlation is attributed to the fact that the two defects are located closer than the sum of their Fermi-Thomas screening lengths. This work brings new implications to the source of low frequency noise in nanodevices. Moreover, statistic studies provide a new avenue to study correlated effects due to particle interactions.