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Improving Signal-to-Noise Performance for DNA Trans location in Solid-State Nanopores at MHz Bandwidths

机译:在MHz带宽下提高固态纳米孔中DNA转运的信噪性能

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DNA sequencing using solid-state nanopores is, in part, impeded by the relatively high noise and low bandwidth of the current state-of-the-art translocation measurements. In this Letter, we measure the ion current noise through sub 10 nm thick Si3N4 nanopores at bandwidths up to 1 MHz. At these bandwidths, the input-referred current noise is dominated by the amplifiers voltage noise acting across the total capacitance at the amplifier input. By reducing the nanopore chip capacitance to the 1-5 pF range by adding thick insulating layers to the chip surface, we are able to transition to a regime in which input-referred current noise (similar to 117-150 pArms at 1 MHz in 1 M KCl solution) is dominated by the effects of the input capacitance of the amplifier itself. The signal-to-noise ratios (SNRs) reported here range from 15 to 20 at 1 MHz for dsDNA translocations through nanopores with diameters from 4 to 8 nm with applied voltages from 200 to 800 mV. Further advances in bandwidth and SNR will require new amplifier designs that reduce both input capacitance and input-referred amplifier noise.
机译:使用固态纳米孔的DNA测序在一定程度上受到当前现有技术易位测量相对较高的噪声和较低的带宽的阻碍。在这封信中,我们通过带宽不足1 MHz的亚10纳米厚Si3N4纳米孔测量离子电流噪声。在这些带宽下,输入参考电流噪声受放大器电压噪声支配,该电压噪声作用于放大器输入端的总电容。通过在芯片表面添加厚绝缘层,将纳米孔芯片电容减小到1-5 pF,我们可以过渡到一种输入参考电流噪声(类似于1 MHz中1 MHz时的117-150 pArms) M KCl溶液)受放大器本身输入电容的影响。此处报道的dsDNA穿过直径为4至8 nm的纳米孔,施加电压为200至800 mV的dsDNA易位时,此处报道的信噪比(SNR)在15 MHz至20 MHz范围内。带宽和SNR的进一步提高将要求采用新的放大器设计,以减少输入电容和以输入为参考的放大器噪声。

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