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Ultrahigh pseudocapacitance of mesoporous Ni-doped Co(OH)_2/ITO nanowires

机译:介孔Ni掺杂Co(OH)_2 / ITO纳米线的超高拟电容

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Mesoporous Ni-doped Co(OH)_2 was uniformly deposited along indium-tin oxide nanowires (ITO NWs) which were directly grown on titanium substrates by chemical vapor deposition followed by potentiostatic electrodeposition through a hexagonal liquid crystalline phase of a nonionic surfactant. The as-synthesized electrode is a network composed of ultrathin nanosheets with thickness of about 10nm containing pores in the diameter range of 2-3nm. The mesoporous nanowire electrode demonstrates extremely high specific capacitance of 2052Fg~(-1) at discharge current density of 1Ag~(-1) in an aqueous KOH solution. Moreover, the nanowires with mesoporous nanosheets exhibit superior pseudocapacitive behavior, lower capacitance fading, and better rate performance than films with mesoporous nanosheets.
机译:沿铟锡氧化物纳米线(ITO NW)均匀沉积介孔Ni掺杂的Co(OH)_2,该铟锡氧化物纳米线通过化学气相沉积法接着通过非离子表面活性剂的六角形液晶相进行恒电位电沉积而直接生长在钛基板上。合成后的电极是由超薄纳米片组成的网络,该纳米片的厚度约为10nm,包含直径范围为2-3nm的孔。介孔纳米线电极在KOH水溶液中的放电电流密度为1Ag〜(-1)时显示出极高的比电容2052Fg〜(-1)。此外,与具有中孔纳米片的膜相比,具有中孔纳米片的纳米线表现出优异的伪电容行为,较低的电容衰减和更好的速率性能。

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