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Deliydroxylation and Formation of KU-1 Silica Glass Surface Defects during Annealing

机译:退火过程中的去甲氧基化和KU-1硅玻璃表面缺陷的形成

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摘要

Formation of KU-1 silica glass surface defects under annealing is considered. Based on experimental data obtained by annealing of silica glass samples in the temperature range of 800-980°C, it is shown that internal stress forming due to deliydroxylation of the surface zone is the main cause of surface defects. To determine the depth of this zone for different annealing conditions, a formula is suggested. It shows that the internal stress is less than the critical one and the silica glass surface is not changed if the annealing temperature is 850°C or higher due to the fast relaxation rate. At a lower annealing temperature, the surface defects are formed in a few tens of hours during annealing.
机译:考虑在退火下形成KU-1二氧化硅玻璃表面缺陷。根据通过在800-980°C的温度范围内对石英玻璃样品进行退火获得的实验数据,表明由于表面区域的去甲氧基化导致的内部应力形成是表面缺陷的主要原因。为了确定不同退火条件下该区域的深度,建议使用公式。结果表明,如果退火温度为850°C或更高,则由于快速弛豫速率,内应力小于临界应力,并且石英玻璃表面不会发生变化。在较低的退火温度下,在退火期间的几十小时内会形成表面缺陷。

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