Paving the Way to High-Quality Indium Nitride--The Effects of Reactor Geometry and Pressure

摘要

Indium nitride (InN), with band gap energy of about 0.7 eV, is a promising material for fabricating devices such as laser diodes for high-performance optical communications systems and field effect transistors. However, it is very difficult to grow InN due to the extremely high solid-vapor phase equilibrium pressure of nitrogen. Here, we design some new reactors to meet this challenge and confirm those effects in InN growth.