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Trinuclear tantalum clusters grafted to hydroxylated silica surfaces: A density-functional embedded-cluster study

机译:三核钽簇接枝到羟基化的二氧化硅表面:密度功能嵌入式簇研究

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摘要

To identify the coordination modes of bare and hydrogenated trinuclear tantalum species on hydroxylated silica, we computationally examined models of Ta3H (n) (n = 0, 3, 5-9) species grafted to a beta-cris-tobalite surface. Ta3H (n) clusters are bound to the surface by substitution of hydrogen atoms of vicinal (aEuro broken vertical bar O-)(3)SiOH and geminal (aEuro broken vertical bar O-)(2)Si(OH)(2) groups via three and six, respectively, Ta-O bonds of similar to 193 pm on average, in both types of models. The maximum Ta-O coordination number of non-hydrogenated Ta-3 species to a silica surface is seven for the second type model surface; the additional Ta-O bond is due to an oxygen atom located in a bridging position to Ta-Ta bond. In the latter case, the mean Ta-O bond distance to one of =Si(O-)(2) group is increased by 15 pm. For the complexes bound via vicinal silanol groups, each additional unit of hydrogen loading on the metal elongated the average Ta-Ta distance by similar to 2 pm, covering a range of 258-277 pm. For the most stable hydrogenated trimers, Ta3H9, the desorption energies of hydrogen atoms are relatively high, above 70 kJ/mol. The average Ta-Ta distances increase by similar to 19 pm on going from the complex (=SiO-)(3)Ta3H9 to complex (=SiO-)(3)Ta-3 and by similar to 5 pm when the hydrogen loading is increased by one unit for (=Si(O-)(2))(3)Ta3H (n) complexes, reaching the maximum value 319 pm when n = 9. The desorption energies of hydrogen atoms for the most stable tantalum trimer species grafted to the surface by geminal silanol groups, (=Si(O-)(2))(3)Ta3H7, are rather low, less than 40 kJ/mol.
机译:为了确定羟基二氧化硅上裸露的和氢化的三核钽物质的配位模式,我们通过计算方法研究了嫁接到β-cris-tobalite表面上的Ta3H(n)(n = 0、3、5-9)物质的模型。 Ta3H(n)团簇通过邻位(aEuro垂直折线O-)(3)SiOH和双子座(aEuro垂直折线O-)(2)Si(OH)(2)基团的氢原子取代而结合到表面在这两种模型中,分别通过三个和六个分别平均接近193 pm的Ta-O键。对于第二种模型表面,未氢化的Ta-3物种在二氧化硅表面的最大Ta-O配位数为7;额外的Ta-O键是由于位于Ta-Ta键桥接位置的氧原子所致。在后一种情况下,与= Si(O-)(2)基团之一的平均Ta-O键距离增加15 pm。对于通过邻位硅烷醇基团键合的配合物,金属上每增加一个氢单元,其平均Ta-Ta距离将延长2 pm,覆盖范围为258-277 pm。对于最稳定的氢化三聚体Ta3H9,氢原子的解吸能相对较高,高于70 kJ / mol。从配合物(= SiO-)(3)Ta3H9变为配合物(= SiO-)(3)Ta-3时,平均Ta-Ta距离增加约19 pm,当氢负荷为时增加约5 pm。 (= Si(O-)(2))(3)Ta3H(n)络合物增加一个单位,当n = 9时达到最大值319 pm。最稳定接枝的钽三聚体物种的氢原子解吸能通过双键硅烷醇基团形成的表面的(= Si(O-)(2))(3)Ta3H7相当低,小于40 kJ / mol。

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