Field emission characteristics of an oxidized porous polysilicon using thermal oxidation and electrochemical oxidation

摘要

The field emission characteristics of an oxidized porous polysilicon were investigated using different oxidation process with Pt/Ti multi layer electrode. The surface oxidation layer on an oxidized porous polysilicon was formed by thermal oxidation and electrochemical oxidation. The emission efficiency of thermal oxidation which was performed in a dry O-2 with O-2 flow rate of 3/min at 900 degrees C for 60 min showed 3.36% at V-ps = 16 V. The electrochemical oxidation was formed by solution containing 1 M sulphuric acid under 10 mA/cm(2) for 40 sec and was annealed 5 hr to improve oxide quality at 600 degrees C. The emission efficiency of electrochemical oxidation showed 3.81% at V-ps = 14 V.