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Charge Carrier Mobility and Ageing of ZnPc/C60 Solar Cells

机译:ZnPc / C60太阳能电池的电荷载流子迁移率和老化

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Cu and Zn Phtalocyanines ( CuPc and ZnPc), and C60 are materials frequently used for organic Solar cell engineering. Their energy levels form a donor-acceptor junction, and they have high absorption coefficients and a complementary absorption for the Sun spectrum. We have investigated ageing properties of ZnPc/C60 Solar cells as they are influenced by the charge carrier mobility and variation of the potential barrier height of the ZnPc/C60 interface. The structures ITOI ZnPc/ C601 C60:AOBI Al with a reasonable energy conversion efficiency of ~1.5% were investigated.The samples were aged for 1300 hours upon illumination with blue LED,with peak emission at 475 nm, and incident light power density of 10 mW/cm~2. The aged devices showed a strong and fast degradation of the short circuit current and of the fill factor after several hours followed by an almost constant behaviour of these values. The reference samples kept in the dark at the room temperature did show only very small changes in their I-V curves. Carrier mobility dependencies on electric field strength at different temperatures were measured by the Charge Extraction by Linearly Increasing Voltage (CELIV) method. It was demonstrated that mobility values decrease during degradation as compared to the reference samples. Nevertheless only mobility changes cannot explain the observed drop of device current. The increase of the effective barrier height at the interface of ZnPc and C60 by about 0.1 eV from ~0.55 eV up to ~0.65 eV was observed in the aged samples. Meanwhile thermal activation energy values of the electrical conductivity grew from about 0.28 eV prior to degradation up to about 0.34 eV after ageing.
机译:铜和锌酞菁(CuPc和ZnPc)以及C60是有机太阳能电池工程中经常使用的材料。它们的能级形成施主-受主结,并且具有高吸收系数和太阳光谱的互补吸收。我们已经研究了ZnPc / C60太阳能电池的老化特性,因为它们受到电荷载流子迁移率和ZnPc / C60界面势垒高度变化的影响。研究了ITOI ZnPc / C601 C60:AOBI Al的结构,其合理的能量转换效率约为1.5%。样品在蓝色LED照射下老化1300小时,峰值发射在475 nm,入射光功率密度为10毫瓦/厘米〜2。老化的设备在几个小时后,短路电流和填充因子迅速而强烈地降低,随后这些值几乎保持不变。室温下保持黑暗的参考样品的I-V曲线仅显示很小的变化。载流子迁移率对不同温度下电场强度的依赖性通过线性增加电压电荷提取(CELIV)方法测量。已证明与参考样品相比,迁移率值在降解过程中降低。然而,仅迁移率变化不能解释观察到的器件电流下降。在老化的样品中,观察到ZnPc和C60界面处的有效势垒高度从〜0.55 eV到〜0.65 eV大约增加了0.1 eV。同时,电导率的热活化能值从降解前的约0.28 eV增长到老化后的约0.34 eV。

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