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机译:
Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen;
Department Components for High Frequency Electronics and CENIDE, University of Duisburg-Essen;
机译:在Si(111)衬底上具有AlN / GaN分布布拉格反射器的垂直导电InGaN / GaN多量子阱LED
机译:Optical Confinement Study of Laser MBE Grown InGaN/GaN Quantum Well Structure using Surface Plasmon Resonance Technique
机译:Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy
机译:在Si(111)衬底上生长的InGaN / GaN MQW中具有薄AlGaN中间层的高效蓝光LED
机译:利用纳米技术在Si上生长,制造和表征基于InGaN / GaN的蓝色,绿色和黄色LED。
机译:掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
机译:InGaN light-emitting diodes with band-pass-filter-like GaN : si nanoporous structures
机译:经受高电流脉冲的蓝色alGaN / InGaN / GaN LED的劣化