Evidence of polarization switching induced by magnetic field in BiFeO _3 thin film

摘要

A BiFeO_3 thin film was prepared on the (111) Pt/Ti/SiO _2/Si substrate by the solution coating method. In order to detect the effect of an external magnetic field on the BiFeO_3 thin film, a fine scan X-ray diffraction with a scan ratio of 0.002°/s was carried out under the magnetic field parallel to the film surface. The result of the in situ analysis of X-ray diffraction for the thin film in the magnetic field indicates that the magnetic field leads to an increase of the integral intensity ratio of I{(110)}/I{(overline 110)} compared with that under no magnetic field. The increase of I{(110)}/I{(overline 110)} implies a domain switching under the magnetic field, where the domain switching comes from the decreasing residual tensile stress induced by the magnetostriction of BiFeO_3 in the magnetic field.