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Optical properties in wurtzite InGaN staggered quantum wells

机译:纤锌矿型InGaN交错量子阱的光学性质

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摘要

The polarization field effects on exciton states and optical properties are studied theoretically in the wurtzite (WZ) InxGa(1-x)N/InyGa(1-y)N staggered quantum wells (QWs). Numerical results show that the polarization field effects are obvious on the Stark shifts of the exciton binding energy, the oscillator strength and the emission wavelength when the well width and Indium content y increase in the symmetric staggered QWs. However, the influences of InxGa1-xN well layer are remarkable on exciton states and optical properties when the Indium concentration y is small in the asymmetric staggered QWs. In addition, the ground state linear optical susceptibility is also investigated in the WZ staggered QWs.
机译:理论上在纤锌矿(WZ)InxGa(1-x)N / InyGa(1-y)N交错量子阱(QWs)中研究了极化场对激子态和光学性质的影响。数值结果表明,当对称交错量子阱中阱宽和铟含量y增加时,极化场效应对激子结合能,振动子强度和发射波长的斯塔克位移有明显的影响。然而,当铟的浓度y在不对称交错QW中较小时,InxGa1-xN阱层对激子态和光学性能的影响非常明显。此外,还在WZ交错QW中研究了基态线性光学敏感性。

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