Investigation of self-organization processes in semiconductor under photo-Gunn effect

摘要

In the given paper, the results are presented of the investigation of non-equilibrium stationary carriers system in semiconductor under photo-Gunn effect. It was found that space-homogeneous state of the system is unstable in the case of negative differential conductivity and two waves of space-time perturbations with different phase velocities propagate through the crystal. Phase velocity degeneration conditions have been determined for these waves. Dependence of the complex attenuation decrement on external in-fluences (electric field tension, incident light intensity, semiconductor compensation degree and spectral range) has been investigated in details. State dynamics of inhomogeneous carrier system has been studied using synergetics; methods. Obtained results prove that one can controllably switch between the oscillation states of electron subsystem by changing the incident light intensity. [References: 4]