Carriers lifetime distribution in CdSe epitaxial layers impurified with iodine and chlorine investigated by photoconductive frequency-resolved spectroscopy

摘要

The analysis of carrier lifetime distribution in CdSe epitaxial layers grown onto (0001)oriented mica substrates by the vapor epitaxial method at various substrate temperatures (745degreesC, 750degreesC and 780degreesC), annealed at temperatures up to 400degreesC and impurified with iodine and chlorine carrier traps is made in the frequency range of carrier recombination kinetics by means of photoconductive frequency-resolved spectroscopy. (PCFRS). The carrier lifetime distribution depends on processes related to band-to-band, deep local levels induced by impurities and structural defect recombination mechanisms. [References: 10]