首页> 外文期刊>Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics >THE STRENGTH OF FANO INTERFERENCE EFFECTS ON THE PROBE ABSORPTION IN ASYMMETRIC SEMICONDUCTOR QUANTUM WELLS
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THE STRENGTH OF FANO INTERFERENCE EFFECTS ON THE PROBE ABSORPTION IN ASYMMETRIC SEMICONDUCTOR QUANTUM WELLS

机译:非对称半导体量子阱中探针干扰吸收的强度受到干扰的强度。

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摘要

We investigate the strength of Fano interference eects on the probe absorption spectra in asymmetric semiconductor quantum wells driven coherently by a probe laser eld. We nd that the probe absorption can be dramatically reduced due to the strength of the Fano interference, and the eect of the energy splitting on the probe absorption is also discussed. Our study is much more practical than its atomic counterpart due to its exible design and the controllable interference strength. Thus it may provide some possibilities for technological applications in optoelectronics and solid-state quantum information science.
机译:我们研究了由探针激光场相干驱动的非对称半导体量子阱中探针吸收光谱上的Fano干涉效应的强度。我们发现,由于Fano干扰的强度,可以大大降低探针的吸收,并且还讨论了能量分裂对探针吸收的影响。我们的研究由于其灵活的设计和可控的干扰强度,比其原子研究更为实用。因此,它可以为光电子和固态量子信息科学中的技术应用提供一些可能性。

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