Microstructure and photoluminescence of MoS2 decorated ZnO nanorods

摘要

The microstructure and photoluminescence (PL) of MoS2 decorated ZnO nanorods samples (ZnO-MoS2-T, with T is the deposition time of MoS2 in minutes) are investigated in this paper. The presence of few-layer MoS2 is confirmed by transmission electron microscope and Raman spectra measurements. The PL position of MoS2 excited by a laser with wavelength of 514 nm is shifted to lower energy with the average layer number increasing, indicating a band gap narrowing effect due to layer number increasing. The decoration influence on PL of ZnO nanorods is studied by using an excited laser with wavelength of 325 nm. The intensity of UV emission from ZnO is largely weakened by MoS2 decoration. The possible mechanism is discussed. There are a new UV and visible emission band for MoS2 decorated samples. The new UV emission band may be from the MoS2 quantum dots. The new visible emission band may be from ZnO/MoS2 interface and heterojunctions. The room temperature ferromagnetism of few layer MoS2 is too small to be observed in our experiments.